High Coupling Efficiency Silicon-Based Colloidal Quantum Dot Electroluminescent Devices with Ag Reflectors

Authors

  • Jiajun Zhu College of New Materials and New Energies, Shenzhen Technology University, China
  • Yuxuan Ye College of New Materials and New Energies, Shenzhen Technology University, China https://orcid.org/0009-0005-1562-0063
  • Fankai Zheng Institute of Nanoscience and Applications and Department of Electronic and Electrical Engineering, Southern University of Science and Technology, China
  • Yilan Zhang College of New Materials and New Energies, Shenzhen Technology University, China
  • Zhiyang Lu College of New Materials and New Energies, Shenzhen Technology University, China
  • Hechun Zhang College of New Materials and New Energies, Shenzhen Technology University, China
  • Sifan Chen College of New Materials and New Energies, Shenzhen Technology University, China
  • Jiongwen Fang College of New Materials and New Energies, Shenzhen Technology University, China
  • Yunji Yi College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, China
  • Kai Wang Institute of Nanoscience and Applications and Department of Electronic and Electrical Engineering, Southern University of Science and Technology, China https://orcid.org/0000-0003-0443-6955
  • Dan Wu College of New Materials and New Energies, Shenzhen Technology University, China

DOI:

https://doi.org/10.47852/bonviewJOPR52025619

Keywords:

quantum dots electroluminescent device, waveguide coupling efficiency, on-chip light sources

Abstract

On-chip silicon photonic chips are critical in various applications including chip-to-chip communication, sensing, and near-eye display technologies, but they all face significant challenges in efficiently coupling light sources onto the chip. This study introduces a design adopting colloidal quantum dot light-emitting diode (QLED) as an on-chip light source coupled with optimized Ag reflectors below and within the SiN waveguide. The inclined Ag reflector was positioned directly below the QLED within the GaN waveguide with an optimal angle of 45° and 100 nm thickness, along with a planar Ag reflector 500 nm below the waveguide with 200 nm thickness. Numerical simulation results indicate that at a distance of 50 μm from the QLED center, the average coupling efficiency of the device is 9.76%, which is 2.58 times higher than the counterpart without the Ag reflector. These findings demonstrate a significant improvement in coupling efficiency, suggesting a promising approach for future on-chip light source designs.

 

Received: 11 March 2025 | Revised: 14 May 2025 | Accepted: 29 July 2025

 

Conflicts of Interest

The authors declare that they have no conflicts of interest to this work.

 

Data Availability Statement

Data are available from the corresponding author upon reasonable request.

 

Author Contribution Statement

Jiajun Zhu: Validation, Formal analysis, Investigation, Data curation, Writing – original draft, Writing – review & editing, Visualization. Yuxuan Ye: Software, Validation, Data curation, Writing – original draft, Writing – review & editing. Fankai Zheng: Software, Validation, Investigation. Yilan Zhang: Writing – review & editing, Visualization. Zhiyang Lu: Software, Writing – review & editing. Hechun Zhang: Data curation, Writing – review & editing. Sifan Chen: Writing – review & editing, Supervision. Jiongwen Fang: Writing – review & editing. Yunji Yi: Methodology, Resources, Writing – review & editing, Supervision. Kai Wang: Methodology, Resources, Writing – review & editing, Supervision. Dan Wu: Conceptualization, Methodology, Resources, Writing – review & editing, Supervision, Project administration, Funding acquisition.


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Published

2025-08-19

Issue

Section

Research Articles

How to Cite

Zhu, J., Ye, Y., Zheng, F., Zhang, Y. ., Lu, Z., Zhang, H., Chen, S., Fang, J., Yi, Y., Wang, K., & Wu, D. (2025). High Coupling Efficiency Silicon-Based Colloidal Quantum Dot Electroluminescent Devices with Ag Reflectors. Journal of Optics and Photonics Research. https://doi.org/10.47852/bonviewJOPR52025619